| PART |
Description |
Maker |
| VN920-B5 VN920SOTR-E |
SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY
INDUCTOR, AXIAL, 12UH; Inductor type:Choke; Inductance:12uH; Tolerance, inductance: /-20%; Resistance:0.04R; Current, DC max:4A; Frequency, resonant
INDUCTOR, AXIAL, 22UH; Inductor type:Choke; Inductance:22uH; Tolerance, inductance: /-20%; Resistance:0.07R; Current, DC max:3A; Frequency, resonant:110MHz; Case style:Axial; Material, core:Ferrite; Tolerance, :20%; Tolerance, RoHS Compliant: Yes
|
STMicroelectronics
意法半导
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| 350GE451U030C 350HP832U6R3C 350HP232U030C 350JL741 |
Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top
105 垄陋C, Low Inductance, Radial, Aluminum Electrolytic
105 ?C, Low Inductance, Radial, Aluminum Electrolytic
105 ?C, Low Inductance, Radial, Aluminum Electrolytic
105 ?C, Low Inductance, Radial, Aluminum Electrolytic
|
Cornell Dubilier Electronics
ETC
List of Unclassifed Manufacturers
http://
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| 6000-560K-RC 6000-391K-RC 6000-392K-RC 6000-390K-R |
Unshielded Surface Mount Inductors 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Radial Lead RF Chokes
RF Choke; Series:6000; Inductance:68uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:4.9MHz; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.36A; DC Resistance Max:0.21ohm
RF Choke; Series:6000; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Q Factor:20; Self Resonant Frequency:29MHz; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:4.1A; DC Resistance Max:0.035ohm
RF Choke; Series:6000; Inductance:47uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:6.5MHz; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.77A; DC Resistance Max:0.16ohm
|
NorComp
Bourns Electronic Solutions
BOURNS INC
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| PM105-271K-RC PM105-151K-RC |
Power Inductor; Series:PM105; Inductance:270uH; Inductance Tolerance: /- 10 %; Self Resonant Frequency:4MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:0.57A; DC Resistance Max:0.97ohm
Power Inductor; Series:PM105; Inductance:150uH; Inductance Tolerance: /- 10 %; Self Resonant Frequency:5MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:0.78A; DC Resistance Max:0.47ohm
|
BOURNS INC
|
| 5900-6R8-RC 5900-270-RC 5900-180-RC 5900-821-RC 59 |
High I , Axial Choke 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High I , Axial Choke 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High I , Axial Choke 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High I , Axial Choke 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High I , Axial Choke 1 ELEMENT, 22000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
RF Choke; Series:5900; Inductance:330uH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:1.6A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:0.212ohm
High Current Chokes
|
Bourns, Inc.
TE Connectivity, Ltd.
Jameco Electronics
BOURNS INC
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| U2009-150Y U2009-220Y U2009-3R3Y U2009-4R4Y |
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:1370mR; Frequency, resonant:40MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:2600mR; Frequency, resonant:30MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 3.3UH; Inductor type:Shielded Power Choke; Inductance:3.3uH; Tolerance, inductance: /-30%; Resistance:320mR; Frequency, resonant:100MHz; Case style:SMD Shielded; Q factor:7; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.4UH; Inductor type:Shielded Power Choke; Inductance:4.4uH; Tolerance, inductance: /-30%; Resistance:430mR; Frequency, resonant:85MHz; Case style:SMD Shielded; Q factor:7; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
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BOURNS INC
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